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INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2456-4184 | Impact factor: 8.76 | ESTD Year: 2016 Scholarly open access journals, Peer-reviewed, and Refereed Journals, Impact factor 8.76 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool) , Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI) |
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| Paper Title: | BAND GAP IN NANO-LASERS |
| Authors Name: | Dr. Kirti Vishwakarma , Dr. O.P. Vishwakarma |
| Download E-Certificate: | Download |
| Author Reg. ID: |
IJNRD_184627
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| Published Paper Id: | IJNRD2212077 |
| Published In: | Volume 7 Issue 12, December-2022 |
| DOI: | |
| Abstract: | A nano-laser is a laser that has nano-scale dimensions and it refers to a micro-/nano- device which can emit light with light or electric excitation of nano-wires or other nano-materials that serve as resonators. A standard feature of nanolasers includes their light confinement on a scale approaching or suppressing the diffraction limit of light. These tiny lasers can be modulated quickly and, combined with their small footprint, this makes them ideal candidates for on-chip optical computing. Due to its exceptional features, quantum well and quantum dot laser technology has recently received a lot of interest. Gain materials for semiconductor lasers are frequently made of quantum well and quantum dot architectures. In comparison to Gallium arsenide and Indium phosphaide quantum well lasers, the Indium Arsenide laser exhibits a very high level of variation. Indium Arsenide active layers exhibit greater fluctuation at low energies than Gallium arsenide and Indium phosphaide active layers. Variation is incredibly little in medium bandgap materials. Indium Arsenide laser variation is also found to be much higher than that of Gallium arsenide and Indium phosphaide quantum dot lasers. Indium arsenide exhibits greater fluctuation at low energies than Gallium arsenide. Because of this, quantum dot nano-structured laser is more suited for device applications. |
| Keywords: | Nano-scale, Quantum Dot Laser, Band Gap, Quantum Well Laser, Quantum Confinement, Nano-stuctured laser. |
| Cite Article: | "BAND GAP IN NANO-LASERS", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.7, Issue 12, page no.a561-a564, December-2022, Available :http://www.ijnrd.org/papers/IJNRD2212077.pdf |
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| ISSN: |
2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
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Published Paper ID:IJNRD2212077 Registration ID: 184627 Published In: Volume 7 Issue 12, December-2022 DOI (Digital Object Identifier): Page No: a561-a564 Country: JABALPUR, MADHYA PRADESH, India Research Area: Physics Publisher : IJ Publication Published Paper URL : https://www.ijnrd.org/viewpaperforall?paper=IJNRD2212077 Published Paper PDF: https://www.ijnrd.org/papers/IJNRD2212077 |
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ISSN: 2456-4184
Impact Factor: 8.76 and ISSN APPROVED
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