INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2456-4184 | Impact factor: 8.76 | ESTD Year: 2016
Scholarly open access journals, Peer-reviewed, and Refereed Journals, Impact factor 8.76 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool) , Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI)
This review paper includes review study of the fundamentals of HEMT device and technology. The working principle of the HEMT device has been explained. The major advantage of HEMT device is high mobile electrons concentration in the channel. The various semiconductor materials properties such as InP and GaN also explained briefly. InP is one of the useful materials for optoelectronics and electronic devices. Due to wide band gap, high thermal stability and high critical field, the GaN-based material system are very attention-seizing for electronics domain application.
Keywords:
HEMT, Heterojunction, High Electron Mobility Concentration, InP, GaN.
Cite Article:
"A Review Study on Fundamentals of HEMT Device and Technology", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.8, Issue 5, page no.d99-d101, May-2023, Available :http://www.ijnrd.org/papers/IJNRD2305315.pdf
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ISSN:
2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
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