IJNRD Research Journal

WhatsApp
Click Here

WhatsApp editor@ijnrd.org
IJNRD
INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-4184 | Impact factor: 8.76 | ESTD Year: 2016
Scholarly open access journals, Peer-reviewed, and Refereed Journals, Impact factor 8.76 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool) , Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI)

Call For Paper

For Authors

Forms / Download

Published Issue Details

Editorial Board

Other IMP Links

Facts & Figure

Impact Factor : 8.76

Issue per Year : 12

Volume Published : 9

Issue Published : 94

Article Submitted :

Article Published :

Total Authors :

Total Reviewer :

Total Countries :

Indexing Partner

Join RMS/Earn 300

Licence

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Published Paper Details
Paper Title: Multi Threshold CMOS Technique for designing of Low Power 4 Bit ALU and Combinational Circuits
Authors Name: Prachi , Professor KL Purshnani
Download E-Certificate: Download
Author Reg. ID:
IJNRD_182953
Published Paper Id: IJNRD2209092
Published In: Volume 7 Issue 9, September-2022
DOI:
Abstract: Exponential increase in the transistor density on a single substrate in an integrated circuit has paved the way for tremendous growth in the semiconductor industry. Very Large Scale Integration (VLSI) of these transistors on a single substrate boosts performance but also causes multiple issues related to delay and power consumption. It is important to boost performance but keep the trade-offs related to delay and power to a minimum. This has resulted in researchers moving towards low-power design techniques. Such techniques are different from conventional design techniques in such a way that power is consumed as and when needed. This helps in minimizing the total power consumed by any circuit. The work presented in this paper aims to present the capability of the multiple threshold complementary metal oxide semiconductor (MTCMOS) technique to achieve low power consumption with approximately the same delay time in a single circuit. Standard arithmetic and logic circuits have been simulated at the 180 nm technology node and critical parameters, namely power, and delay, have been calculated using the MTCMOS technique and compared with conventional CMOS design. It is shown that by using transistors of different thresholds (as in the MTCMOS technique) power consumption is significantly reduced.
Keywords: CMOS, Delay, leakage, MTCMOS, Power Dissipation
Cite Article: "Multi Threshold CMOS Technique for designing of Low Power 4 Bit ALU and Combinational Circuits", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.7, Issue 9, page no.789-795, September-2022, Available :http://www.ijnrd.org/papers/IJNRD2209092.pdf
Downloads: 000118743
ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publication Details: Published Paper ID:IJNRD2209092
Registration ID: 182953
Published In: Volume 7 Issue 9, September-2022
DOI (Digital Object Identifier):
Page No: 789-795
Country: GHAZIABAD, Uttar Pradesh, India
Research Area: Electronics & Communication Engg. 
Publisher : IJ Publication
Published Paper URL : https://www.ijnrd.org/viewpaperforall?paper=IJNRD2209092
Published Paper PDF: https://www.ijnrd.org/papers/IJNRD2209092
Share Article:
Share

Click Here to Download This Article

Article Preview
Click Here to Download This Article

Major Indexing from www.ijnrd.org
Semantic Scholar Microsaoft Academic ORCID Zenodo
Google Scholar ResearcherID Thomson Reuters Mendeley : reference manager Academia.edu
arXiv.org : cornell university library Research Gate CiteSeerX PUBLON
DRJI SSRN Scribd DocStoc

ISSN Details

ISSN: 2456-4184
Impact Factor: 8.76 and ISSN APPROVED
Journal Starting Year (ESTD) : 2016

DOI (A digital object identifier)


Providing A digital object identifier by DOI
How to Get DOI? DOI

Conference

Open Access License Policy

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License

Creative Commons License This material is Open Knowledge This material is Open Data This material is Open Content

Important Details

Social Media

Licence

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License

Join RMS/Earn 300

IJNRD