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IJNRD
INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-4184 | Impact factor: 8.76 | ESTD Year: 2016
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Impact Factor : 8.76

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Paper Title: Low Power Transistor Stacking System in VLSI Circuits in 18nm
Authors Name: MADDAL CHARYULU , MOVVA SAILAXMI
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IJNRD_201989
Published Paper Id: IJNRD2307260
Published In: Volume 8 Issue 7, July-2023
DOI:
Abstract: : Now a days, It is difficult to design a CMOS circuit without leakage current. One of the main difficulties in CMOS VLSI design is leakage power dissipation. Switching and short circuit leakage power have a big impact on how inputs transition dynamically at high frequencies. The power consumption of circuits can be reduced using a variety of widely accepted ways. There are some efficient ways to lower CMOS VLSI circuits' power dissipation. The power consumption of circuits can be reduced using a variety of common ways.We introduced a novel technology called LPTSS(Low power transistors stacking system) to mitigate circuit power reduction. CMOS logic devices' leakage power should be reduced, in this work designed a new stacking mechanism. To demonstrate how the suggested technique works in several CMOS logic circuits, including NAND, Inverter, NOR, and MUX, we used these circuits. To demonstrate the relative decrease in both time and power loss, as well as simultaneously compared the different reduction techniques with our suggested system. With the proposed system, inaccordance with reference to the traditional approaches such as Stack ONFIC, SAPON,etc. The Cadence tool uses 18nm technology to replicate all of the techniques listed.
Keywords: LPTSSS,NAND,NOR,MUX,LCNT,LECTOR,SAPON,STACK ONOFIC
Cite Article: "Low Power Transistor Stacking System in VLSI Circuits in 18nm ", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.8, Issue 7, page no.c621-c632, July-2023, Available :http://www.ijnrd.org/papers/IJNRD2307260.pdf
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ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publication Details: Published Paper ID:IJNRD2307260
Registration ID: 201989
Published In: Volume 8 Issue 7, July-2023
DOI (Digital Object Identifier):
Page No: c621-c632
Country: Hyderabad, Telangana, India
Research Area: Electronics & Communication Engg. 
Publisher : IJ Publication
Published Paper URL : https://www.ijnrd.org/viewpaperforall?paper=IJNRD2307260
Published Paper PDF: https://www.ijnrd.org/papers/IJNRD2307260
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ISSN: 2456-4184
Impact Factor: 8.76 and ISSN APPROVED
Journal Starting Year (ESTD) : 2016

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