IJNRD Research Journal

WhatsApp
Click Here

WhatsApp editor@ijnrd.org
IJNRD
INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-4184 | Impact factor: 8.76 | ESTD Year: 2016
Scholarly open access journals, Peer-reviewed, and Refereed Journals, Impact factor 8.76 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool) , Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI)

Call For Paper

For Authors

Forms / Download

Published Issue Details

Editorial Board

Other IMP Links

Facts & Figure

Impact Factor : 8.76

Issue per Year : 12

Volume Published : 9

Issue Published : 96

Article Submitted :

Article Published :

Total Authors :

Total Reviewer :

Total Countries :

Indexing Partner

Join RMS/Earn 300

Licence

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Published Paper Details
Paper Title: DESIGN AND COMPARITIVE ANALYSIS OF BINARY AND TERNARY SRAM CELL
Authors Name: S. Vardhan Kumar , A. Nandini , A. Dhakshayini , Ch. Kavya , T. Venkata Lakshmi
Download E-Certificate: Download
Author Reg. ID:
IJNRD_191104
Published Paper Id: IJNRD2304264
Published In: Volume 8 Issue 4, April-2023
DOI:
Abstract: One of the biggest problems in portable applications, which are always in demand and include laptops, mobile phones, etc., is a low power circuit. Static Random Memory (SRAM) consumes a sizable portion of a system-on-a-chip (Soc) and considerably adds to the chip's overall power consumption, which is why efforts are made to develop low power Recurrently, there is a demand for the design of high performance and low-power memory circuits. Both high-performance processors and portable handheld devices require. SRAM as a key component. With ternary inverters and inverters, we are creating SRAM. cells. The binary number system's fundamental unit is 2. (0,1). The base number for the ternary numeral system is 3. (0,1 and 2). In the proposed project, binary and ternary SRAMs both from different cells will be compared, and performance traits such. propagation delay, power dissipation, as well as energy delay product will be monitored and determined.
Keywords: Binary SRAMs, Ternary SRAMs, Power dissipation, Delay, Area, Average Power,
Cite Article: "DESIGN AND COMPARITIVE ANALYSIS OF BINARY AND TERNARY SRAM CELL", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.8, Issue 4, page no.c502-c505, April-2023, Available :http://www.ijnrd.org/papers/IJNRD2304264.pdf
Downloads: 000118750
ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publication Details: Published Paper ID:IJNRD2304264
Registration ID: 191104
Published In: Volume 8 Issue 4, April-2023
DOI (Digital Object Identifier):
Page No: c502-c505
Country: Krishna District, Andhra Pradesh, India
Research Area: Engineering
Publisher : IJ Publication
Published Paper URL : https://www.ijnrd.org/viewpaperforall?paper=IJNRD2304264
Published Paper PDF: https://www.ijnrd.org/papers/IJNRD2304264
Share Article:
Share

Click Here to Download This Article

Article Preview
Click Here to Download This Article

Major Indexing from www.ijnrd.org
Semantic Scholar Microsaoft Academic ORCID Zenodo
Google Scholar ResearcherID Thomson Reuters Mendeley : reference manager Academia.edu
arXiv.org : cornell university library Research Gate CiteSeerX PUBLON
DRJI SSRN Scribd DocStoc

ISSN Details

ISSN: 2456-4184
Impact Factor: 8.76 and ISSN APPROVED
Journal Starting Year (ESTD) : 2016

DOI (A digital object identifier)


Providing A digital object identifier by DOI
How to Get DOI? DOI

Conference

Open Access License Policy

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License

Creative Commons License This material is Open Knowledge This material is Open Data This material is Open Content

Important Details

Social Media

Licence

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License

Join RMS/Earn 300

IJNRD